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Freescale Semiconductor Technical Data
Will be replaced by MMG1001NT1 in Q305. N suffix indicates 260C reflow capable. The PFP-16 package has had lead-free terminations from its initial release.
Document Number: MMG1001 Rev. 5, 7/2005
Gallium Arsenide CATV Integrated Amplifier Module
Features * Specified for 79 -, 112 - and 132 -Channel Loading * Excellent Distortion Performance * Built-in Input Diode Protection * GaAs FET Transistor Technology * Unconditionally Stable Under All Load Conditions * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel. Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Table 1. Maximum Ratings
Rating RF Voltage Input (Single Tone) DC Supply Voltage 24 V Application 12 V Application Operating Case Temperature Range Storage Temperature Range
MMG1001R2 MMG1001T1
870 MHz 19 dB GAIN 132 -CHANNEL CATV INTEGRATED AMPLIFIER MODULE
16 1
CASE 978-03 PFP-16
Symbol Vin VCC
Value +65 +26 +14 -20 to +100 -40 to +100
Unit dBmV Vdc
TC Tstg
C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Pin 3 Q1 Pin 4 RS1 Pin 5 RS2 Pin 6 Q2 Pin 7 Q4 Pin 11 RG4 Pin 13 RG3 Q3 Pin 15 N.C. N.C. VG1 VS1 VC VS2 VG2 N.C. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VD3 N.C. VGC N.C. VD4 N.C. N.C. Symbol RJC Value 6.6 Unit C/W
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Diagram
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2005. All rights reserved.
MMG1001R2 MMG1001T1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (minimum) M1 (minimum) C5 (minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope 50 MHz 870 MHz 40 - 870 MHz Symbol BW Gp S GF IRL f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz ORL f = 40-400 MHz f = 401-870 MHz 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 132-Channel FLAT 112-Channel FLAT 79-Channel FLAT 50 MHz 870 MHz CSO132 CSO112 CSO79 XMD132 XMD112 XMD79 CTB132 CTB112 CTB79 NF IDC -- -- -- -- -- -- -- -- -- -- -- -- -- 230 22 17 -65 -65 -71 -64 -63 -62 -63 -64 -65 4 4 250 -- -- dBc -58 -59 -62 dBc -52 -52 -52 dBc -56 -56 -58 5.0 5.0 265 dB mA (continued) -- -- 21 19 22 -- -- -- dB Min 40 -- -- -- -- Typ -- 18 19 0.6 0.5 Max 870 -- -- -- -- Unit MHz dB dB dB dB
Gain Flatness (40 - 870 MHz, Peak to Valley) Input Return Loss (Zo = 75 Ohms)
Output Return Loss (Zo = 75 Ohms)
Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) Noise Figure
DC Current (VDC = 24 V, TC = -20 to +100C)
MMG1001R2 MMG1001T1 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30C, 75 system unless otherwise noted) (continued)
Characteristic Frequency Range Power Gain Slope 50 MHz 870 MHz 40 - 870 MHz Symbol BW Gp S GF IRL f = 40-160 MHz f = 161-450 MHz f = 451-870 MHz ORL f = 40-400 MHz f = 401-750 MHz f = 751-870 MHz 112-Channel FLAT 79-Channel FLAT 112-Channel FLAT 79-Channel FLAT 112-Channel FLAT 79-Channel FLAT 50 MHz 870 MHz CSO112 CSO79 XMD112 XMD79 CTB112 CTB79 NF IDC -- -- -- -- -- -- -- -- -- -- -- 190 19 17 15 -65 -71 -63 -62 -64 -65 4 4 210 -- -- -- dBc -- -- dBc -- -- dBc -- -- 5.0 5.0 225 dB mA -- -- 21 19 19 -- -- -- dB Min 40 -- -- -- -- Typ -- 18 19 0.6 0.5 Max 870 -- -- -- -- Unit MHz dB dB dB dB
Gain Flatness (40 - 870 MHz, Peak to Valley) Input Return Loss (Zo = 75 Ohms)
Output Return Loss (Zo = 75 Ohms)
Composite Second Order (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +42 dBmV/ch., FM = 55 MHz) (Vout = +42 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) Noise Figure
DC Current (VDC = 12 V, TC = -20 to +100C)
MMG1001R2 MMG1001T1 RF Device Data Freescale Semiconductor 3
C10 C7 R9 C5 Pin 3 Pin 4 R18 Pin 5 Pin 6 R12 C6 C4 Pin 7 Pin 11 L2 Pin 13 R15 R16 VCC D3 R17 D2 C11 C9 T2 RF OUTPUT R13 Pin 15 L1
R11 C3 RF INPUT T1 C12
C1
R10 R1 R19 R2 D1 R3 R6 Q2 C2 R5 R7
C8
R14
R4
Q1 R8
Figure 3. MMG1001 50 -870 MHz Test Circuit Schematic
Table 6. MMG1001 50 -870 MHz Test Circuit Component Designations and Values
Designation C1, C7, C8, C11 C2, C3, C4, C9, C10 C5, C6 C12 D1 D2 D3 L1, L2 Q1, Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10, R15 R11, R12 R13, R14 R16 R17 R18 R19 T1 T2 PCB Description (24 V Application) 220 pF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) 5.6 pF Chip Capacitor (0603) 5.1 V Zener Diode, On/MM3Z5V1T1 27 V Zener Diode, On/MM3Z27VT1 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27A T3 22 nH Chip Inductors (0603) Dual Transistors Package, On/MBT3904DW1T1 2.2 kW, 1/4 W Chip Resistor (1206) 560 W Chip Resistor (0603) 82 W Chip Resistor (0603) 820 W Chip Resistors (0603) 820 W Chip Resistors (0603) 120 W Chip Resistor (0603) 1.5 kW Chip Resistor (0603) 12 W, 1 W Chip Resistor (2512) 470 W Chip Resistors (0603) 18 W Chip Resistors (0603) 910 W Chip Resistors (0603) 2 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) 15 W Chip Resistor (0603) 0 W Chip Resistor (0603) Input Transformer, Mot/77PC016E068 Output Transformer, Mot/77PC016E061 FR4, 62 mil, r = 4.81 Description (12 V Application) 220 pF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) 5.6 pF Chip Capacitor (0603) 5.1 V Zener Diode, On/MM3Z5V1T1 27 V Zener Diode, On/MM3Z27VT1 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27A T3 22 nH Chip Inductors (0603) Dual Transistors Package, On/MBT3904DW1T1 820 W, 1/4 W Chip Resistor (1206) 560 W Chip Resistor (0603) 40 W Chip Resistor (0603) 150 W Chip Resistors (0603) 100 W Chip Resistors (0603) 120 W Chip Resistor (0603) 1.5 kW Chip Resistor (0603) 4.8 W, 1 W Chip Resistor (2512) 470 W Chip Resistors (0603) 18 W Chip Resistors (0603) 910 W Chip Resistors (0603) 2.7 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) 15 W Chip Resistor (0603) 0 W Chip Resistor (0603) Input Transformer, 77PC016E068 Output Transformer, 77PC016E061 FR4, 62 mil, r = 4.81
MMG1001R2 MMG1001T1 4 RF Device Data Freescale Semiconductor
MMG1001R2 Rev 0
R5 R7 Q1 Q2 R6
R16 R19 R9 R11 C3 C5 T1 R18 C6 C4 R10 R12 C12 C8 R14 R17 C10 R3 R2 R4 D1 D3 R1 C7 R13 L1 R15 L2 T2 C9
R8 C2 C1
D2 C11
GND
Not Active
VCC
Note: 24 V Application, VCC = 24 V 12 V Application, VCC = 12 V
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Figure 4. MMG1001 50 -870 MHz Test Circuit Component Layout
MMG1001R2 MMG1001T1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS FOR 24 V APPLICATION
-60 CTB, COMPOSITE TRIPLE BEAT (dBc)
48 dBmV 46 dBmV -65 50 dBmV
-70
44 dBmV 42 dBmV
-75 0
79-Channel Loading, Flat 200 400 600
f, FREQUENCY (MHz)
Figure 5. Composite Triple Beat versus Frequency
-65 CSO, COMPOSITE SECOND ORDER (dBc) 48 dBmV 50 dBmV -70 46 dBmV
-75 42 dBmV -80 44 dBmV 79-Channel Loading, Flat 0 200 400 600
-85
f, FREQUENCY (MHz)
Figure 6. Composite Second Order versus Frequency
XMD, CROSS MODULATION DISTORTION (dBc)
-55 48 dBmV 50 dBmV -60 46 dBmV -65 44 dBmV -70 42 dBmV
-75 0
79-Channel Loading, Flat 200 400 600
f, FREQUENCY (MHz)
Figure 7. Cross Modulation Distortion versus Frequency MMG1001R2 MMG1001T1 6 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y A A2
M
b1 c
DATUM PLANE SEATING PLANE
H
C
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978-03 ISSUE C PFP -16
RF Device Data Freescale Semiconductor
EEE CCC EEE CCC
b aaa
M
c1
CA
S
SECT W-W
MMG1001R2 MMG1001T1 7
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MMG1001R2 MMG1001T1 8Rev. 5, 7/2005
Document Number: MMG1001
RF Device Data Freescale Semiconductor

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